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SIC Device 碳化硅器件
> SiC MOSFET(碳化硅MOS)
> SiC Diode(碳化硅二极管)
Silicon-based MOS 硅基MOS
> High Voltage Planar MOSFET(高压MOS)
> Low Voltage Planar MOSFET(低压MOS)
Silicon-based Schottky 硅基肖特基
> SCHOTTKY Diode（肖特基二极管）
TVS protection devices TVS保护器件
> TVS-Transient Voltage Suppressor(TVS二极管)

Latest Products

TVS TO-263-2L
2025-08-29
TVS TO-247S
2025-08-29
TVS TO-247-2L
2025-08-28
TVS TO-220C-3L
2025-08-28
TVS TO-220-2L
2025-08-27
TVS TO-252-2L
2025-08-27
SiC MOS TO-263-2L
2025-08-29
SiC MOS TO-247S
2025-08-29

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Address: 4 Tianxian Avenue, Economic Development Zone, Tianmen, Hubei, 431700 China (Tianmen Science and Technology City, Optical Valley, China)
Mobile:+86 18671760303
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Low V MOS TO - 220F Samsung

Low V MOS TO - 220F Samsung

Low V MOS TO - 247

Low V MOS TO - 247

Low V MOS TO - 3P

Low V MOS TO - 3P

Low V MOS TO 220AB

Low V MOS TO 220AB

Low V MOS TO 220F General

Low V MOS TO 220F General

Low V MOS TO 220C

Low V MOS TO 220C

Low V MOS TO 251

Low V MOS TO 251

Low V MOS TO 252

Low V MOS TO 252

Low V MOS TO 263C

Low V MOS TO 263C

About us

The company focuses on MOSFET, Schottky, fast recovery, Thyristor, IGBT and other advanced semiconductor power devices, power IC, sensor assembly and testing business. Our assembled semi-conductor devices & products are widely used in energy saving, automotive electronics, green lighting, wind power generation, smart grid, electric vehicles, instrument and measuring meter engineering, consumer electronics and other fields.

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new information product High Voltage Planar MOSFET TO-247S SiC Diode TO-247S SiC MOSFET TO-247S TVS-Transient Voltage Suppressor TO-247S TVS-Transient Voltage Suppressor TO-263-2L SiC MOSFET TO-263-2L SiC Diode TO-263-2L High Voltage Planar MOSFET TO-263-2L

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